 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Electrostatic Discharge Symbol VCEO VCBO VEBO IC 0.5 PD 625 5.0 PD 1.5 12 TJ, Tstg - 55 to +150 mW mW/C Watt mW/C C 1 http://onsemi.com BC635 45 45 BC637 60 60 5.0 BC639 80 80 Unit Vdc Vdc Vdc Adc 3 BASE 1 EMITTER COLLECTOR 2 ESD HBM>16000, MM>2000 V 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA 200 RqJC 83.3 Device BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1 C/W Max Unit C/W TO-92 (TO-226AA) CASE 29 STYLE 14 ORDERING INFORMATION Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 2000 Units/Tape & Reel 2000 Units/Ammo Pack 5000 Units/Box 5000 Units/Box 2000 Units/Tape & Reel 2000 Units/Ammo Pack (c) Semiconductor Components Industries, LLC, 2000 1 February, 2000 - Rev. 2 Publication Order Number: BC635/D BC635, BC637, BC639 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO -- -- -- -- 100 10 nAdc Adc 45 60 80 5.0 -- -- -- -- -- -- -- -- Vdc 45 60 80 -- -- -- -- -- -- Vdc Vdc Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 VCE(sat) VBE(on) 25 40 40 40 25 -- -- -- -- -- -- -- -- -- -- 250 160 160 -- 0.5 1.0 Vdc Vdc -- (IC = 500 mA, VCE = 2.0 V) Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib -- -- -- 200 7.0 50 -- -- -- MHz pF pF http://onsemi.com 2 BC635, BC637, BC639 1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25C PD TC 25C BC635 BC637 BC639 100 PD TC 25C PD TA 25C SOA = 1S hFE, DC CURRENT GAIN 200 500 VCE = 2 V 100 50 2 345 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 1. Active Region Safe Operating Area f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 500 300 V, VOLTAGE (VOLTS) 1 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V VCE = 2 V 100 0.6 0.4 50 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. Current-Gain -- Bandwidth Product Figure 4. "Saturation" and "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) -0.2 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 V for VBE -2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 5. Temperature Coefficients http://onsemi.com 3 BC635, BC637, BC639 PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 029-04 ISSUE AD A R P SEATING PLANE B STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE F L K D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 BC635/D |
Price & Availability of BC635
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |